Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Standard

Effect of Gate Oxide Defects on Tunnel Transistor RF Performance. / Hellenbrand, Markus; Memisevic, Elvedin; Svensson, Johannes; Krishnaraja, Abinaya; Lind, Erik; Wernersson, Lars-Erik.

2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., 2018. p. 137-138.

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Harvard

Hellenbrand, M, Memisevic, E, Svensson, J, Krishnaraja, A, Lind, E & Wernersson, L-E 2018, Effect of Gate Oxide Defects on Tunnel Transistor RF Performance. in 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 137-138, 76th Device Research Conference, Santa Barbara, United States, 2018/07/24. https://doi.org/10.1109/DRC.2018.8442145

APA

Hellenbrand, M., Memisevic, E., Svensson, J., Krishnaraja, A., Lind, E., & Wernersson, L-E. (2018). Effect of Gate Oxide Defects on Tunnel Transistor RF Performance. In 2018 76th Device Research Conference (DRC) (pp. 137-138). IEEE - Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442145

CBE

Hellenbrand M, Memisevic E, Svensson J, Krishnaraja A, Lind E, Wernersson L-E. 2018. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance. In 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc. pp. 137-138. https://doi.org/10.1109/DRC.2018.8442145

MLA

Hellenbrand, Markus et al. "Effect of Gate Oxide Defects on Tunnel Transistor RF Performance". 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc. 2018, 137-138. https://doi.org/10.1109/DRC.2018.8442145

Vancouver

Hellenbrand M, Memisevic E, Svensson J, Krishnaraja A, Lind E, Wernersson L-E. Effect of Gate Oxide Defects on Tunnel Transistor RF Performance. In 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc. 2018. p. 137-138 https://doi.org/10.1109/DRC.2018.8442145

Author

Hellenbrand, Markus ; Memisevic, Elvedin ; Svensson, Johannes ; Krishnaraja, Abinaya ; Lind, Erik ; Wernersson, Lars-Erik. / Effect of Gate Oxide Defects on Tunnel Transistor RF Performance. 2018 76th Device Research Conference (DRC). IEEE - Institute of Electrical and Electronics Engineers Inc., 2018. pp. 137-138

RIS

TY - GEN

T1 - Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

AU - Hellenbrand, Markus

AU - Memisevic, Elvedin

AU - Svensson, Johannes

AU - Krishnaraja, Abinaya

AU - Lind, Erik

AU - Wernersson, Lars-Erik

PY - 2018/6/25

Y1 - 2018/6/25

N2 - Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.

AB - Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd;w. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors.

U2 - 10.1109/DRC.2018.8442145

DO - 10.1109/DRC.2018.8442145

M3 - Paper in conference proceeding

SP - 137

EP - 138

BT - 2018 76th Device Research Conference (DRC)

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

ER -