Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

Research output: Contribution to journalArticle


Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Chemical Sciences
  • Atom and Molecular Physics and Optics
  • Condensed Matter Physics
Original languageEnglish
Pages (from-to)1801
JournalAdvanced Materials
Publication statusPublished - 2007
Publication categoryResearch

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041), Synchrotron Radiation Research (011013009)