Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

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Abstract

Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.

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Subject classification (UKÄ) – MANDATORY

  • Chemical Sciences
  • Atom and Molecular Physics and Optics
  • Condensed Matter Physics
Original languageEnglish
Pages (from-to)1801
JournalAdvanced Materials
Volume19
Publication statusPublished - 2007
Publication categoryResearch
Peer-reviewedYes

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041), Synchrotron Radiation Research (011013009)