Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

Research output: Contribution to journalArticle

Abstract

InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.

Details

Authors
  • Mattias Borg
  • Lynne Gignac
  • John Bruley
  • Andreas Malmgren
  • Saurabh Sant
  • Clarissa Convertino
  • Marta D. Rossell
  • Marilyne Sousa
  • Chris Breslin
  • Heike Riel
  • Kirsten E. Moselund
  • Heinz Schmid
Organisations
External organisations
  • IBM Thomas J. Watson Research Center
  • Lund University
  • IBM Research Zurich
  • Swiss Federal Laboratories for Materials Science and Technology
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology
Original languageEnglish
Article number084004
JournalNanotechnology
Volume30
Issue number8
Publication statusPublished - 2019
Publication categoryResearch
Peer-reviewedYes

Related projects

View all (1)