Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

Research output: Contribution to journalArticle

Abstract

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC.

Details

Authors
  • O. Yastrubchak
  • Janusz Sadowski
  • L. Gluba
  • J. Z. Domagala
  • M. Rawski
  • J. Zuk
  • M. Kulik
  • T. Andrearczyk
  • T. Wosinski
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Natural Sciences
  • Physical Sciences
Original languageEnglish
Article number072402
JournalApplied Physics Letters
Volume105
Issue number7
Publication statusPublished - 2014
Publication categoryResearch
Peer-reviewedYes