First InGaAs lateral nanowire MOSFET RF noise measurements and model

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) and a noise model are presented. We have characterized the RF noise and scattering parameters of an indium gallium arsenide (InGaAs) device. A fitted model yields extrapolated ft = 316 GHz current gain cutoff and fmax = 166 GHz maximum oscillation frequency. This device technology is being developed for millimeter wave circuit implementations, targeting a 94 GHz carrier frequency. The modeled intrinsic Fmin < 1dB minimum noise figure obtained promises performance at the target band, given reduction of gate parasitics. In any wireless system, noise and bandwidth limits the performance. Understanding of RF noise in nanowire MOSFET devices is thereby key for realization of future radar and communications systems.

Details

Authors
Organisations
External organisations
  • Fraunhofer Institute for Applied Solid State Physics
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
Publication statusPublished - 2017 Aug 1
Publication categoryResearch
Peer-reviewedYes
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: 2017 Jun 252017 Jun 28

Conference

Conference75th Annual Device Research Conference, DRC 2017
CountryUnited States
CitySouth Bend
Period2017/06/252017/06/28

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