Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

Research output: Contribution to journalArticle


We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology


  • InAs/InP, selective etching, heterostructure nanowires, nanogap, electrodes, dielectrophoresis
Original languageEnglish
Article number465306
Issue number46
Publication statusPublished - 2014
Publication categoryResearch