Gate defined quantum dot realized in a single crystalline InSb nanosheet

Research output: Contribution to journalArticle

Abstract

A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.

Details

Authors
  • Jianhong Xue
  • Yuanjie Chen
  • Dong Pan
  • Ji Yin Wang
  • Jianhua Zhao
  • Shaoyun Huang
  • H. Q. Xu
Organisations
External organisations
  • Peking University
  • Institute of Semiconductors Chinese Academy of Sciences
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology
Original languageEnglish
Article number023108
JournalApplied Physics Letters
Volume114
Issue number2
Publication statusPublished - 2019
Publication categoryResearch
Peer-reviewedYes