Gate defined quantum dot realized in a single crystalline InSb nanosheet

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Bibtex

@article{9a8c98e2e2004d34a16a402b8f40195f,
title = "Gate defined quantum dot realized in a single crystalline InSb nanosheet",
abstract = "A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.",
author = "Jianhong Xue and Yuanjie Chen and Dong Pan and Wang, {Ji Yin} and Jianhua Zhao and Shaoyun Huang and Xu, {H. Q.}",
year = "2019",
doi = "10.1063/1.5064368",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AIP Publishing LLC",
number = "2",

}