Gate defined quantum dot realized in a single crystalline InSb nanosheet

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Gate defined quantum dot realized in a single crystalline InSb nanosheet. / Xue, Jianhong; Chen, Yuanjie; Pan, Dong; Wang, Ji Yin; Zhao, Jianhua; Huang, Shaoyun; Xu, H. Q.

In: Applied Physics Letters, Vol. 114, No. 2, 023108, 2019.

Research output: Contribution to journalArticle

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Xue, Jianhong ; Chen, Yuanjie ; Pan, Dong ; Wang, Ji Yin ; Zhao, Jianhua ; Huang, Shaoyun ; Xu, H. Q. / Gate defined quantum dot realized in a single crystalline InSb nanosheet. In: Applied Physics Letters. 2019 ; Vol. 114, No. 2.

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TY - JOUR

T1 - Gate defined quantum dot realized in a single crystalline InSb nanosheet

AU - Xue, Jianhong

AU - Chen, Yuanjie

AU - Pan, Dong

AU - Wang, Ji Yin

AU - Zhao, Jianhua

AU - Huang, Shaoyun

AU - Xu, H. Q.

PY - 2019

Y1 - 2019

N2 - A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.

AB - A single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics, and topological quantum computing. Here, we report on the realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate, and quantum dot confinement is achieved by the top gate technique. Transport measurements of the device are carried out at a low temperature in a dilution refrigerator. It is found that the measured charge stability diagram is characterized by a series of small Coulomb diamonds at high plunger gate voltages and a series of large Coulomb diamonds at low plunger gate voltages, demonstrating the formation of a gate-tunable quantum dot in the InSb nanosheet. Gate-defined planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.

U2 - 10.1063/1.5064368

DO - 10.1063/1.5064368

M3 - Article

VL - 114

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023108

ER -