Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Research output: Contribution to journalArticle

Abstract

Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.

Details

Authors
  • Jie Sun
  • Marcus Larsson
  • Ivan Maximov
  • Hilde Hardtdegen
  • Hongqi Xu
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • quantum, well devices, semiconductor quantum dots, quantum interference devices, nanotechnology, indium compounds, III-V semiconductors, high-k dielectric thin films, hafnium compounds, g-factor, gallium arsenide, atomic layer deposition, Coulomb blockade
Original languageEnglish
Article number042114
JournalApplied Physics Letters
Volume94
Issue number4
Publication statusPublished - 2009
Publication categoryResearch
Peer-reviewedYes