Giant, level-dependent g factors in InSb nanowire quantum dots.

Research output: Contribution to journalArticle

Standard

Giant, level-dependent g factors in InSb nanowire quantum dots. / Nilsson, Henrik; Caroff, Philippe; Thelander, Claes; Larsson, Marcus; Wagner, Jakob; Wernersson, Lars-Erik; Samuelson, Lars; Xu, Hongqi.

In: Nano Letters, Vol. 9, No. 9, 2009, p. 3151-3156.

Research output: Contribution to journalArticle

Harvard

APA

CBE

MLA

Vancouver

Author

Nilsson, Henrik ; Caroff, Philippe ; Thelander, Claes ; Larsson, Marcus ; Wagner, Jakob ; Wernersson, Lars-Erik ; Samuelson, Lars ; Xu, Hongqi. / Giant, level-dependent g factors in InSb nanowire quantum dots. In: Nano Letters. 2009 ; Vol. 9, No. 9. pp. 3151-3156.

RIS

TY - JOUR

T1 - Giant, level-dependent g factors in InSb nanowire quantum dots.

AU - Nilsson, Henrik

AU - Caroff, Philippe

AU - Thelander, Claes

AU - Larsson, Marcus

AU - Wagner, Jakob

AU - Wernersson, Lars-Erik

AU - Samuelson, Lars

AU - Xu, Hongqi

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041), Electrical and information technology (011041010)

PY - 2009

Y1 - 2009

N2 - We report on magnetotransport measurements on InSb nanowire quantum dots. The measurements show that the quantum levels of the InSb quantum dots have giant g factors, with absolute values up to approximately 70, the largest value ever reported for semiconductor quantum dots. We also observe that the values of these g factors are quantum level dependent and can differ strongly between different quantum levels. The presence of giant g factors indicates that considerable contributions from the orbital motion of electrons are preserved in the measured InSb nanowire quantum dots, while the level-to-level fluctuations arise from spin-orbit interaction. We have deduced a value of Delta(SO) = 280 mueV for the strength of spin-orbit interaction from an avoided level crossing between the ground state and first excited state of an InSb nanowire quantum dot with a fixed number of electrons.

AB - We report on magnetotransport measurements on InSb nanowire quantum dots. The measurements show that the quantum levels of the InSb quantum dots have giant g factors, with absolute values up to approximately 70, the largest value ever reported for semiconductor quantum dots. We also observe that the values of these g factors are quantum level dependent and can differ strongly between different quantum levels. The presence of giant g factors indicates that considerable contributions from the orbital motion of electrons are preserved in the measured InSb nanowire quantum dots, while the level-to-level fluctuations arise from spin-orbit interaction. We have deduced a value of Delta(SO) = 280 mueV for the strength of spin-orbit interaction from an avoided level crossing between the ground state and first excited state of an InSb nanowire quantum dot with a fixed number of electrons.

U2 - 10.1021/nl901333a

DO - 10.1021/nl901333a

M3 - Article

VL - 9

SP - 3151

EP - 3156

JO - Nano Letters

T2 - Nano Letters

JF - Nano Letters

SN - 1530-6992

IS - 9

ER -