Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

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Abstract

Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.

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Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • semiconductor quantum wires, semiconductor, semiconductor growth, nanowires, nanofabrication, growth, molecular beam epitaxial, gallium arsenide, III-V semiconductors, heterojunctions
Original languageEnglish
Article number121901
JournalApplied Physics Letters
Volume96
Issue number12
Publication statusPublished - 2010
Publication categoryResearch
Peer-reviewedYes