Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • III-V, one-dimensional transport, nano-whiskers, heterostructures
Original languageEnglish
Title of host publicationPhysica E: Low-dimensional Systems and Nanostructures
PublisherElsevier
Pages1126-1130
Volume13
Publication statusPublished - 2002
Publication categoryResearch
Peer-reviewedYes
EventTenth International Conference on Modulated Semiconductor Structures. MSS 10 - Linz, Austria
Duration: 2001 Jul 232001 Jul 27

Publication series

Name
Number2-4
Volume13
ISSN (Print)1386-9477

Conference

ConferenceTenth International Conference on Modulated Semiconductor Structures. MSS 10
CountryAustria
CityLinz
Period2001/07/232001/07/27

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

Related research output

Jonas Ohlsson, 2001, Solid State Physics. 110 p.

Research output: ThesisDoctoral Thesis (compilation)

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