Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching

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Abstract

We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 degrees C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP. (C) 2013 Elsevier B.V. All rights reserved.

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Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • Nanostructures, Growth from vapor, Metal organic vapor phase epitaxy, Nanomaterials
Original languageEnglish
Pages (from-to)47-51
JournalJournal of Crystal Growth
Volume386
Publication statusPublished - 2014
Publication categoryResearch
Peer-reviewedYes

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)