Growth of InAs NWs with controlled morphology by CVD

Research output: Contribution to journalArticle

Abstract

We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

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Authors
Organisations
External organisations
  • Peking University
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
Original languageEnglish
Article number012013
JournalJournal of Physics: Conference Series
Volume864
Issue number1
Publication statusPublished - 2017 Aug 15
Publication categoryResearch
Peer-reviewedYes