Growth of InAs NWs with controlled morphology by CVD
Research output: Contribution to journal › Article
We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 2017 Aug 15|