Heterointerfaces in III-V semiconductor nanowhiskers

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • Semiconductor nanowhiskers
Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
PublisherIEEE--Institute of Electrical and Electronics Engineers Inc.
Pages281-283
Publication statusPublished - 2002
Publication categoryResearch
Peer-reviewedYes
Event14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden
Duration: 2002 May 122002 May 16

Publication series

Name
ISSN (Print)1092-8669

Conference

Conference14th Indium Phosphide and Related Materials Conference
CountrySweden
CityStockholm
Period2002/05/122002/05/16