We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).
|Title of host publication||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|Publisher||IEEE--Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2002|
|Event||14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden|
Duration: 2002 May 12 → 2002 May 16
|Conference||14th Indium Phosphide and Related Materials Conference|
|Period||2002/05/12 → 2002/05/16|