High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires

Research output: Contribution to journalArticle


We have prepared GaAs wurtzite (WZ)-zinc blende (ZB) nanowire heterostructures by Au particle-assisted metal-organic vapor phase epitaxy (MOVPE) growth. Superior crystal quality of both the transition region between WZ and ZB and of the individual segments themselves was found for WZ-ZB single heterostructures. Pure crystal phases were achieved and the ZB segments were found to be free of any stacking defects, whereas the WZ sections showed a maximum stacking fault density of 20 mu m(-1). The hexagonal cross-sectional wires are terminated by -type side facets for the WZ segment and predominantly {110}-type side facets for the ZB part of the wire. A diameter increase occurred after the transition from WZ to ZB. Additionally, facets of the -type as well as downwards-directed overgrowth of the WZ segments were formed at the WZ to ZB transition to compensate for the observed diameter increase and facet rotation. In the case of WZ-ZB multiple heterostructures, we observed slightly higher densities of stacking faults and twin planes compared to single heterostructures.


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Chemical Sciences


  • Nanowires, GaAs, heterostructure, polytypism, metal-organic vapor phase, epitaxy (MOVPE)-growth
Original languageEnglish
Pages (from-to)470-476
JournalNano Reseach
Issue number7
Publication statusPublished - 2012
Publication categoryResearch

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)