High-Performance InAs Nanowire MOSFETs

Research output: Contribution to journalArticle


In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Pages (from-to)791-793
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - 2012
Publication categoryResearch

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)

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