Hot-Carrier Extraction in Nanowire-Nanoantenna Photovoltaic Devices

Research output: Contribution to journalArticle

Abstract

Nanowires bring new possibilities to the field of hot-carrier photovoltaics by providing flexibility in combining materials for band engineering and using nanophotonic effects to control light absorption. Previously, an open-circuit voltage beyond the Shockley-Queisser limit was demonstrated in hot-carrier devices based on InAs-InP-InAs nanowire heterostructures. However, in these first experiments, the location of light absorption, and therefore the precise mechanism of hot-carrier extraction, was uncontrolled. In this Letter, we combine plasmonic nanoantennas with InAs-InP-InAs nanowire devices to enhance light absorption within a subwavelength region near an InP energy barrier that serves as an energy filter. From photon-energy- and irradiance-dependent photocurrent and photovoltage measurements, we find that photocurrent generation is dominated by internal photoemission of nonthermalized hot electrons when the photoexcited electron energy is above the barrier and by photothermionic emission when the energy is below the barrier. We estimate that an internal quantum efficiency up to 0.5-1.2% is achieved. Insights from this study provide guidelines to improve internal quantum efficiencies based on nanowire heterostructures.

Details

Authors
Organisations
External organisations
  • National Renewable Energy Laboratory
  • Harvard University
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology

Keywords

  • Hot electron, III−V nanowire heterostructure, internal photoemission, photothermionic, plasmonic, solar energy conversion
Original languageEnglish
Pages (from-to)4064-4072
Number of pages9
JournalNano Letters
Volume20
Issue number6
Publication statusPublished - 2020
Publication categoryResearch
Peer-reviewedYes