In Situ Etching for Total Control Over Axial and Radial Nanowire Growth

Research output: Contribution to journalArticle

Abstract

We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.

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Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Chemical Sciences
  • Condensed Matter Physics

Keywords

  • MOVPE, photoluminescence, in situ etching, nanowire growth
Original languageEnglish
Pages (from-to)264-270
JournalNano Reseach
Volume3
Issue number4
Publication statusPublished - 2010
Publication categoryResearch
Peer-reviewedYes

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)