InAs nanowire metal-oxide-semiconductor capacitors
Research output: Contribution to journal › Article
We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|
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