InAs nanowire metal-oxide-semiconductor capacitors

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Abstract

We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.

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  • Condensed Matter Physics
Original languageEnglish
Article number253509
JournalApplied Physics Letters
Volume92
Issue number25
Publication statusPublished - 2008
Publication categoryResearch
Peer-reviewedYes

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