InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure

Research output: Contribution to journalArticle


Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646386]


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Chemical Sciences


  • III-V semiconductors, indium compounds, MOCVD, photoluminescence, semiconductor growth, semiconductor quantum dots, semiconductor quantum, wells, stacking faults, vapour phase epitaxial growth
Original languageEnglish
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2011
Publication categoryResearch

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)