InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

Research output: Contribution to journalArticle

Abstract

We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.

Details

Authors
  • Xianghai Ji
  • Xiaoguang Yang
  • Wenna Du
  • Huayong Pan
  • Shuai Luo
  • Haiming Ji
  • H. Q. Xu
  • Tao Yang
Organisations
External organisations
  • Chinese Academy of Sciences
  • Peking University
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology
  • Condensed Matter Physics

Keywords

  • core-shell heterostructure, InAs/GaSb, metal-organic chemical vapor deposition, nanowires
Original languageEnglish
Article number275601
JournalNanotechnology
Volume27
Issue number27
Publication statusPublished - 2016 May 27
Publication categoryResearch
Peer-reviewedYes