InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

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InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition. / Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, H. Q.; Yang, Tao.

In: Nanotechnology, Vol. 27, No. 27, 275601, 27.05.2016.

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Ji, Xianghai ; Yang, Xiaoguang ; Du, Wenna ; Pan, Huayong ; Luo, Shuai ; Ji, Haiming ; Xu, H. Q. ; Yang, Tao. / InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition. In: Nanotechnology. 2016 ; Vol. 27, No. 27.

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TY - JOUR

T1 - InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

AU - Ji, Xianghai

AU - Yang, Xiaoguang

AU - Du, Wenna

AU - Pan, Huayong

AU - Luo, Shuai

AU - Ji, Haiming

AU - Xu, H. Q.

AU - Yang, Tao

PY - 2016/5/27

Y1 - 2016/5/27

N2 - We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.

AB - We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core. The results obtained here show that the InAs/GaSb core-shell nanowires grown using the Si platform have strong potential in the fabrication of future nanometer-scale devices and in the study of fundamental quantum physics.

KW - core-shell heterostructure

KW - InAs/GaSb

KW - metal-organic chemical vapor deposition

KW - nanowires

UR - http://www.scopus.com/inward/record.url?scp=84975047110&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/27/27/275601

DO - 10.1088/0957-4484/27/27/275601

M3 - Article

VL - 27

JO - Nanotechnology

T2 - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 27

M1 - 275601

ER -