InGaAs tri-gate MOSFETs with record on-current

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding


We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology
  • Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509039012
Publication statusPublished - 2017 Jan 31
Publication categoryResearch
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 2016 Dec 32016 Dec 7


Conference62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco

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