Interface composition of InAs nanowires with Al2O2 and HfO2 thin films

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Abstract

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Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.

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Subject classification (UKÄ) – MANDATORY

  • Materials Engineering

Keywords

  • high-k dielectric thin films, alumina, hafnium compounds, indium, compounds, interface phenomena, nanostructured materials, nanowires, semiconductor materials
Original languageEnglish
Pages (from-to)222907-1-222907-3
JournalApplied Physics Letters
Volume99
Issue number22
Publication statusPublished - 2011
Publication categoryResearch
Peer-reviewedYes