Investigations of radiative lifetimes in the 3p 5p configuration of neutral silicon
Research output: Contribution to journal › Article
Lifetimes for the3S1,3P0, 1, 2 and3D1, 2, 3 states in the 3s23p5p configuration of silicon have been determined using stepwise dye laser excitation and time resolved detection. A comparison is made with theoretical values, calculated using multi-configuration Hartree-Fock wavefunctions. Laser-evaporation was used to produce free silicon atoms by focusing a Nd: YAG laser on a rotating silicon target.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Journal||Zeitschrift für Physik D Atoms, Molecules and Clusters|
|Publication status||Published - 1989|