Investigations of radiative lifetimes in the 3p 5p configuration of neutral silicon

Research output: Contribution to journalArticle

Abstract

Lifetimes for the3S1,3P0, 1, 2 and3D1, 2, 3 states in the 3s23p5p configuration of silicon have been determined using stepwise dye laser excitation and time resolved detection. A comparison is made with theoretical values, calculated using multi-configuration Hartree-Fock wavefunctions. Laser-evaporation was used to produce free silicon atoms by focusing a Nd: YAG laser on a rotating silicon target.

Details

Authors
  • H Bergstrom
  • G. W Faris
  • H Hallstadius
  • Hans Lundberg
  • A Persson
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Atom and Molecular Physics and Optics

Keywords

  • Physics and Astronomy
Original languageEnglish
Pages (from-to)29-31
JournalZeitschrift für Physik D Atoms, Molecules and Clusters
Volume13
Issue number1
Publication statusPublished - 1989
Publication categoryResearch
Peer-reviewedYes