Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

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Abstract

Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

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  • Nano Technology
Original languageEnglish
Pages (from-to)182-187
JournalNano Letters
Volume16
Issue number1
Publication statusPublished - 2016
Publication categoryResearch
Peer-reviewedYes