Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
Research output: Contribution to journal › Article
Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Publication status||Published - 2016|