Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology

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Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology. / Bi, Zhaoxia.

In: Journal of Crystal Growth, Vol. 300, No. 1, 2007, p. 123-126.

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TY - JOUR

T1 - Low-temperature MOCVD growth of InN buffer layers with indium pre-deposition technology

AU - Bi, Zhaoxia

PY - 2007

Y1 - 2007

N2 - Cubic-InN was grown at a low temperature of 350 degrees C using our home-made low-pressure metal-organic chemical vapor deposition (MOCVD). The technology of indium pre-deposition was applied, that is, a layer of indium was deposited on the sapphire surface with a precursor of trimethylindium (TMI) before the growth of InN. Both X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectra show that the pre-deposited indium is able to promote the growth of InN, and meanwhile, suppress the indium aggregation in the grown layer. Atomic force microscopy (AFM) images indicate that the nucleation of InN becomes easier with the pre-deposition of indium. It is proposed that the pre-deposited indium can seed the growth of InN, just like the vapor-liquid-solid (VLS) fabrication of InN whiskers with indium nanoparticles. (c) 2006 Elsevier B.V. All rights reserved.

AB - Cubic-InN was grown at a low temperature of 350 degrees C using our home-made low-pressure metal-organic chemical vapor deposition (MOCVD). The technology of indium pre-deposition was applied, that is, a layer of indium was deposited on the sapphire surface with a precursor of trimethylindium (TMI) before the growth of InN. Both X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectra show that the pre-deposited indium is able to promote the growth of InN, and meanwhile, suppress the indium aggregation in the grown layer. Atomic force microscopy (AFM) images indicate that the nucleation of InN becomes easier with the pre-deposition of indium. It is proposed that the pre-deposited indium can seed the growth of InN, just like the vapor-liquid-solid (VLS) fabrication of InN whiskers with indium nanoparticles. (c) 2006 Elsevier B.V. All rights reserved.

KW - InN

KW - vapor-liquid-solid

KW - MOCVD

KW - indium pre-deposition

U2 - 10.1016/j.jcrysgro.2006.11.003

DO - 10.1016/j.jcrysgro.2006.11.003

M3 - Article

VL - 300

SP - 123

EP - 126

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -