Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires

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We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (similar to 0.0001%) exhibit a low resistance of a few k Omega at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M Omega at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. (C) 2014 AIP Publishing LLC.


Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Chemical Sciences
  • Condensed Matter Physics
Original languageEnglish
Article number153112
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2014
Publication categoryResearch