Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires

Research output: Contribution to journalArticle

Standard

Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires. / Paschoal, Waldomiro; Kumar, Sandeep; Jacobsson, Daniel; Johannes, A.; Jain, Vishal; Canali, C. M.; Pertsova, A.; Ronning, C.; Dick Thelander, Kimberly; Samuelson, Lars; Pettersson, Håkan.

In: Applied Physics Letters, Vol. 104, No. 15, 153112, 2014.

Research output: Contribution to journalArticle

Harvard

Paschoal, W, Kumar, S, Jacobsson, D, Johannes, A, Jain, V, Canali, CM, Pertsova, A, Ronning, C, Dick Thelander, K, Samuelson, L & Pettersson, H 2014, 'Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires', Applied Physics Letters, vol. 104, no. 15, 153112. https://doi.org/10.1063/1.4870423

APA

Paschoal, W., Kumar, S., Jacobsson, D., Johannes, A., Jain, V., Canali, C. M., Pertsova, A., Ronning, C., Dick Thelander, K., Samuelson, L., & Pettersson, H. (2014). Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires. Applied Physics Letters, 104(15), [153112]. https://doi.org/10.1063/1.4870423

CBE

Paschoal W, Kumar S, Jacobsson D, Johannes A, Jain V, Canali CM, Pertsova A, Ronning C, Dick Thelander K, Samuelson L, Pettersson H. 2014. Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires. Applied Physics Letters. 104(15):Article 153112. https://doi.org/10.1063/1.4870423

MLA

Vancouver

Paschoal W, Kumar S, Jacobsson D, Johannes A, Jain V, Canali CM et al. Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires. Applied Physics Letters. 2014;104(15). 153112. https://doi.org/10.1063/1.4870423

Author

Paschoal, Waldomiro ; Kumar, Sandeep ; Jacobsson, Daniel ; Johannes, A. ; Jain, Vishal ; Canali, C. M. ; Pertsova, A. ; Ronning, C. ; Dick Thelander, Kimberly ; Samuelson, Lars ; Pettersson, Håkan. / Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires. In: Applied Physics Letters. 2014 ; Vol. 104, No. 15.

RIS

TY - JOUR

T1 - Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires

AU - Paschoal, Waldomiro

AU - Kumar, Sandeep

AU - Jacobsson, Daniel

AU - Johannes, A.

AU - Jain, Vishal

AU - Canali, C. M.

AU - Pertsova, A.

AU - Ronning, C.

AU - Dick Thelander, Kimberly

AU - Samuelson, Lars

AU - Pettersson, Håkan

PY - 2014

Y1 - 2014

N2 - We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (similar to 0.0001%) exhibit a low resistance of a few k Omega at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M Omega at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. (C) 2014 AIP Publishing LLC.

AB - We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (similar to 0.0001%) exhibit a low resistance of a few k Omega at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M Omega at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. (C) 2014 AIP Publishing LLC.

U2 - 10.1063/1.4870423

DO - 10.1063/1.4870423

M3 - Article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 153112

ER -