Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures

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Bibtex

@article{6abc517b1ed44d5cbfe54bacadadd742,
title = "Magnetoresistance studies on Co/AlOX/Au and Co/AlOX/Ni/Au tunnel structures",
abstract = "We report on magnetoresistance (MR) studies on Co/AlOX/Au and Co/AlOX/Ni/Au magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field.",
keywords = "nickel, magnetisation, tunnelling magnetoresistance, magnetic thin films, gold, ferromagnetic materials, polarisation, electron spin, cobalt, aluminium compounds, band structure",
author = "Ruisheng Liu and Canali, {C. M.} and Lars Samuelson and H Pettersson",
year = "2008",
doi = "10.1063/1.3000614",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "20",

}