Measurements of Si ion stopping in amorphous silicon

Research output: Contribution to journalArticle

Abstract

The stopping of Si-28 ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the Si-28 ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20%, smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.

Details

Authors
  • Harry J Whitlow
  • H Timmers
  • R G Elliman
  • T D M Weijers
  • Y W Zhang
  • J Uribastera
  • D J O'Connor
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Subatomic Physics

Keywords

  • energy loss, silicon, stopping, time of flight
Original languageEnglish
Pages (from-to)84-88
JournalNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume190
Issue number1-4
Publication statusPublished - 2002
Publication categoryResearch
Peer-reviewedYes

Bibliographic note

The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Nuclear Physics (Faculty of Technology) (011013007)