Metal oxide nanoparticles as novel gate materials for field-effect gas sensors
Research output: Contribution to journal › Article
Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Journal||Materials and Manufacturing Processes|
|Publication status||Published - 2006|