Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

Research output: Contribution to journalArticle

Abstract

Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.

Details

Authors
  • S Roy
  • A Salomonsson
  • A Lloyd Spetz
  • C Aulin
  • PO Kall
  • L Ojamae
  • M Strand
  • Mehri Sanati
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Production Engineering, Human Work Science and Ergonomics

Keywords

  • accumulation region, adsorption, capacitance voltage (C-V), depletion region, field-effect, gas sensors, gate material, high frequency, high temperature, interface, metal-insulator-seimconductor (MISIC), nano particles, ruthenium oxide, silicon carbide, transient response
Original languageEnglish
Pages (from-to)275-278
JournalMaterials and Manufacturing Processes
Volume21
Issue number3
Publication statusPublished - 2006
Publication categoryResearch
Peer-reviewedYes