Mobility of near surface MOVPE grown InGaAs/InP quantum wells

Research output: Contribution to journal › Article

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Mobility of near surface MOVPE grown InGaAs/InP quantum wells. / Södergren, Lasse; Garigapati, Navya Sri; Borg, Mattias; Lind, Erik.

In: Applied Physics Letters, Vol. 117, No. 1, 013102, 06.07.2020.

Research output: Contribution to journal › Article

Harvard

Södergren, L, Garigapati, NS, Borg, M & Lind, E 2020, 'Mobility of near surface MOVPE grown InGaAs/InP quantum wells', Applied Physics Letters, vol. 117, no. 1, 013102. https://doi.org/10.1063/5.0006530

APA

Södergren, L., Garigapati, N. S., Borg, M., & Lind, E. (2020). Mobility of near surface MOVPE grown InGaAs/InP quantum wells. Applied Physics Letters, 117(1), [013102]. https://doi.org/10.1063/5.0006530

CBE

Södergren L, Garigapati NS, Borg M, Lind E. 2020. Mobility of near surface MOVPE grown InGaAs/InP quantum wells. Applied Physics Letters. 117(1):Article 013102. https://doi.org/10.1063/5.0006530

MLA

Södergren, Lasse et al. "Mobility of near surface MOVPE grown InGaAs/InP quantum wells". Applied Physics Letters. 2020. 117(1). https://doi.org/10.1063/5.0006530

Vancouver

Södergren L, Garigapati NS, Borg M, Lind E. Mobility of near surface MOVPE grown InGaAs/InP quantum wells. Applied Physics Letters. 2020 Jul 6;117(1). 013102. https://doi.org/10.1063/5.0006530

Author

Södergren, Lasse ; Garigapati, Navya Sri ; Borg, Mattias ; Lind, Erik. / Mobility of near surface MOVPE grown InGaAs/InP quantum wells. In: Applied Physics Letters. 2020 ; Vol. 117, No. 1.

RIS

TY - JOUR

T1 - Mobility of near surface MOVPE grown InGaAs/InP quantum wells

AU - Södergren, Lasse

AU - Garigapati, Navya Sri

AU - Borg, Mattias

AU - Lind, Erik

PY - 2020/7/6

Y1 - 2020/7/6

N2 - In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried quantum wells are limited by polar optical phonon scattering at room temperature. In contrast, the quantum wells directly at the surface are limited by remote charge impurity scattering from defects situated at the III-V/oxide interface or inside the oxide, showing a mobility of 1500 cm2/V s. Passivating the InGaAs surface by depositing an oxide reduces the amount of defects at the interface, increasing the mobility to 2600 cm2/V s.

AB - In this work, we study the electron mobility of near surface metal organic vapor phase epitaxy-grown InGaAs quantum wells. We utilize Hall mobility measurements in conjunction with simulations to quantify the surface charge defect density. Buried quantum wells are limited by polar optical phonon scattering at room temperature. In contrast, the quantum wells directly at the surface are limited by remote charge impurity scattering from defects situated at the III-V/oxide interface or inside the oxide, showing a mobility of 1500 cm2/V s. Passivating the InGaAs surface by depositing an oxide reduces the amount of defects at the interface, increasing the mobility to 2600 cm2/V s.

U2 - 10.1063/5.0006530

DO - 10.1063/5.0006530

M3 - Article

AN - SCOPUS:85087976560

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 013102

ER -