Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures

Research output: Contribution to journalArticle

Abstract

A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.

Details

Authors
Organisations
External organisations
  • St. Petersburg Academic University
  • National Research University of Information Technologies
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
Original languageEnglish
Article number012058
JournalJournal of Physics: Conference Series
Volume1410
Issue number1
Publication statusPublished - 2019
Publication categoryResearch
Peer-reviewedYes
Event6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation
Duration: 2019 Apr 222019 Apr 25