Modelling radiation damage to pixel sensors in the ATLAS detector

Research output: Contribution to journalArticle

Abstract

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 10 1 MeV neq/cm2). © 2019 CERN for the benefit of the ATLAS collaboration. Published by IOP Publishing Ltd on behalf of Sissa Medialab. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.

Details

Authors
Organisations
External organisations
  • CERN
  • Mohamed Premier University
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Accelerator Physics and Instrumentation
  • Subatomic Physics

Keywords

  • Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Radiation-hard detectors, Solid state detectors, Electric fields, Electron emission, Ionizing radiation, Radiation damage, Readout systems, Silicon detectors, ATLAS experiment, Charge collection efficiency, Interaction points, Modelling and simulations, Nonionizing radiation, Radiation hard detectors, Silicon pixel detector, Pixels
Original languageEnglish
Article numberP06012
JournalJournal of Instrumentation
Volume14
Issue number6
Publication statusPublished - 2019
Publication categoryResearch
Peer-reviewedYes