New high resolution negative resist mr-L 6000.1 XP for electron beam and nanoimprint lithography

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

We present the characterization results of a new high resolution negative electron beam resist mr-L 6000.1 XP. The resist can also be used as imprintable polymer in nanoimprint lithography with sub-100 nm resolution. The feature size achieved after e-beam exposure was about 50 nm with sensitivity of 2-4 μC/cm<sup>2</sup>. Studies of the resist properties as a function of chemical composition and development conditions are also presented

Details

Authors
  • Ivan Maximov
  • Marc Beck
  • Patrick Carlberg
  • Lars Montelius
  • K. Pfeiffer
  • F. Reuther
  • G. Gruetzer
  • H. Schulz
  • M. Wissen
  • H.-C. Scheer
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • nanoimprint lithography, high resolution negative resist mr-L 6000.1 XP, electron beam lithography, imprintable polymer, electron beam resolution, 50 nm, sensitivity, chemical composition, electron beam exposure
Original languageEnglish
Title of host publication7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
PublisherLund University
Number of pages2
Publication statusPublished - 2002
Publication categoryResearch
Peer-reviewedYes
EventProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) - Malmö, Sweden
Duration: 2002 Jun 242002 Jun 28

Conference

ConferenceProceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Country/TerritorySweden
CityMalmö
Period2002/06/242002/06/28