Nonlinear electrical properties of Si three-terminal junction devices

Research output: Contribution to journalArticle

Abstract

This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]

Details

Authors
  • Fantao Meng
  • Jie Sun
  • Mariusz Graczyk
  • Kailiang Zhang
  • Mika Prunnila
  • Jouni Ahopelto
  • Peixiong Shi
  • Jinkui Chu
  • Ivan Maximov
  • Hongqi Xu
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
Original languageEnglish
Article number242106
JournalApplied Physics Letters
Volume97
Issue number24
Publication statusPublished - 2010
Publication categoryResearch
Peer-reviewedYes