Nonlinear electrical properties of Si three-terminal junction devices

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Bibtex

@article{0ab4acf6d38f49f9bda3121030efbb9a,
title = "Nonlinear electrical properties of Si three-terminal junction devices",
abstract = "This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]",
author = "Fantao Meng and Jie Sun and Mariusz Graczyk and Kailiang Zhang and Mika Prunnila and Jouni Ahopelto and Peixiong Shi and Jinkui Chu and Ivan Maximov and Hongqi Xu",
year = "2010",
doi = "10.1063/1.3526725",
language = "English",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "24",

}