Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Nanometer-scale electron devices containing three-terminal ballistic junctions are fabricated by electron-beam lithography on InP/InGaAs two-dimensional electron gas materials. Based on the intrinsic nonlinearity of the devices, frequency mixer, phase detector and RS flip-flop memory functioning at room temperature are successfully achieved. The devices have simple structure layout and small size, and are expected to function at high speed.

Details

Authors
  • Jie Sun
  • Daniel Wallin
  • Patrik Brusheim
  • Ivan Maximov
  • Z. G. Wang
  • Hongqi Xu
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • frequency mixer, three-terminal ballistic junctions, flip-flop memory, phase detector, RS
Original languageEnglish
Title of host publicationPhysics of Semiconductors, Pts A and B
PublisherAmerican Institute of Physics
Pages1471-1472
Volume893
Publication statusPublished - 2007
Publication categoryResearch
Peer-reviewedYes
Event28th International Conference on the Physics of Semiconductors (ICPS-28) - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

Name
Volume893
ISSN (Print)1551-7616
ISSN (Electronic)0094-243X

Conference

Conference28th International Conference on the Physics of Semiconductors (ICPS-28)
CountryAustria
CityVienna
Period2006/07/242006/07/28