Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy

Research output: Contribution to journalArticle


We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.


  • Moritz Knoedler
  • Nicolas Bologna
  • Heinz Schmid
  • Mattias Borg
  • Kirsten E. Moselund
  • Stephan Wirths
  • Marta D. Rossell
  • Heike Riel
External organisations
  • IBM Research Zurich
  • Swiss Federal Laboratories for Materials Science and Technology
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Other Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Pages (from-to)6297-6302
Number of pages6
JournalCrystal Growth and Design
Issue number12
Publication statusPublished - 2017 Jan 1
Publication categoryResearch