One dimensional heterostructures and resonant tunneling in III-V nanowires

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics

Keywords

  • III-V nanowires, GaAs, one dimensional heterostructures, epitaxially nucleated semiconductor nanowires growth, InP, gold particles, InP heterostructure barriers, InAs, resonant tunneling diodes, single electron transistors
Original languageEnglish
Title of host publication2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675)
PublisherIEEE--Institute of Electrical and Electronics Engineers Inc.
Pages151-152
ISBN (Print)0-7803-7820-2
Publication statusPublished - 2003
Publication categoryResearch
Peer-reviewedYes
EventIEEE International Symposium on Compound Semiconductors - San Diego, CA, United States
Duration: 2003 Aug 252003 Aug 27

Conference

ConferenceIEEE International Symposium on Compound Semiconductors
CountryUnited States
CitySan Diego, CA
Period2003/08/252003/08/27