Optical properties and morphology of InAs/InP (113)B surface quantum dots

Research output: Contribution to journalArticle

Abstract

We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.

Details

Authors
  • A Nakkar
  • H Folliot
  • A Le Corre
  • F Dore
  • I Alghoraibi
  • C Labbe
  • G Elias
  • S Loualiche
  • Mats-Erik Pistol
  • Philippe Caroff
  • Carl Ellström
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
Original languageEnglish
Pages (from-to)231911-3 pp
JournalApplied Physics Letters
Volume92
Issue number23
Publication statusPublished - 2008
Publication categoryResearch
Peer-reviewedYes