Optical properties and morphology of InAs/InP (113)B surface quantum dots
Research output: Contribution to journal › Article
We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Pages (from-to)||231911-3 pp|
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|