Optical properties and morphology of InAs/InP (113)B surface quantum dots

Research output: Contribution to journalArticle

Bibtex

@article{2bb9254640e64b39b35cc5d2a168465d,
title = "Optical properties and morphology of InAs/InP (113)B surface quantum dots",
abstract = "We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.",
author = "A Nakkar and H Folliot and {Le Corre}, A and F Dore and I Alghoraibi and C Labbe and G Elias and S Loualiche and Mats-Erik Pistol and Philippe Caroff and Carl Ellstr{\"o}m",
year = "2008",
doi = "10.1063/1.2943651",
language = "English",
volume = "92",
pages = "231911--3 pp",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics (AIP)",
number = "23",

}