Optical properties and morphology of InAs/InP (113)B surface quantum dots

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Optical properties and morphology of InAs/InP (113)B surface quantum dots. / Nakkar, A; Folliot, H; Le Corre, A; Dore, F; Alghoraibi, I; Labbe, C; Elias, G; Loualiche, S; Pistol, Mats-Erik; Caroff, Philippe; Ellström, Carl.

In: Applied Physics Letters, Vol. 92, No. 23, 2008, p. 231911-3 pp.

Research output: Contribution to journalArticle

Harvard

Nakkar, A, Folliot, H, Le Corre, A, Dore, F, Alghoraibi, I, Labbe, C, Elias, G, Loualiche, S, Pistol, M-E, Caroff, P & Ellström, C 2008, 'Optical properties and morphology of InAs/InP (113)B surface quantum dots', Applied Physics Letters, vol. 92, no. 23, pp. 231911-3 pp. https://doi.org/10.1063/1.2943651

APA

Nakkar, A., Folliot, H., Le Corre, A., Dore, F., Alghoraibi, I., Labbe, C., Elias, G., Loualiche, S., Pistol, M-E., Caroff, P., & Ellström, C. (2008). Optical properties and morphology of InAs/InP (113)B surface quantum dots. Applied Physics Letters, 92(23), 231911-3 pp. https://doi.org/10.1063/1.2943651

CBE

Nakkar A, Folliot H, Le Corre A, Dore F, Alghoraibi I, Labbe C, Elias G, Loualiche S, Pistol M-E, Caroff P, Ellström C. 2008. Optical properties and morphology of InAs/InP (113)B surface quantum dots. Applied Physics Letters. 92(23):231911-3 pp. https://doi.org/10.1063/1.2943651

MLA

Vancouver

Nakkar A, Folliot H, Le Corre A, Dore F, Alghoraibi I, Labbe C et al. Optical properties and morphology of InAs/InP (113)B surface quantum dots. Applied Physics Letters. 2008;92(23):231911-3 pp. https://doi.org/10.1063/1.2943651

Author

Nakkar, A ; Folliot, H ; Le Corre, A ; Dore, F ; Alghoraibi, I ; Labbe, C ; Elias, G ; Loualiche, S ; Pistol, Mats-Erik ; Caroff, Philippe ; Ellström, Carl. / Optical properties and morphology of InAs/InP (113)B surface quantum dots. In: Applied Physics Letters. 2008 ; Vol. 92, No. 23. pp. 231911-3 pp.

RIS

TY - JOUR

T1 - Optical properties and morphology of InAs/InP (113)B surface quantum dots

AU - Nakkar, A

AU - Folliot, H

AU - Le Corre, A

AU - Dore, F

AU - Alghoraibi, I

AU - Labbe, C

AU - Elias, G

AU - Loualiche, S

AU - Pistol, Mats-Erik

AU - Caroff, Philippe

AU - Ellström, Carl

PY - 2008

Y1 - 2008

N2 - We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.

AB - We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a GaInAsP/InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k.p theory in the envelope function approximation.

U2 - 10.1063/1.2943651

DO - 10.1063/1.2943651

M3 - Article

VL - 92

SP - 231911

EP - 231913

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

ER -