Optimization of Near-Surface Quantum Well Processing
Research output: Contribution to journal › Article
Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Early online date||2021 Jan 12|
|Publication status||Published - 2021|