Optimization of Near-Surface Quantum Well Processing

Research output: Contribution to journalArticle

Abstract

Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

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Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Condensed Matter Physics
  • Nano Technology

Keywords

  • InGaAs, metalorganic vapor-phase epitaxy, metal–oxide–semiconductor field-effect transistors, mobility, quantum wells
Original languageEnglish
Article number2000720
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume218
Issue number7
Early online date2021 Jan 12
Publication statusPublished - 2021
Publication categoryResearch
Peer-reviewedYes