Optimization of Near-Surface Quantum Well Processing

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Bibtex

@article{2094f67b1fee44efaaffd5aa2392575a,
title = "Optimization of Near-Surface Quantum Well Processing",
abstract = "Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.",
keywords = "InGaAs, metalorganic vapor-phase epitaxy, metal–oxide–semiconductor field-effect transistors, mobility, quantum wells",
author = "Patrik Olausson and Lasse S{\"o}dergren and Mattias Borg and Erik Lind",
year = "2021",
doi = "10.1002/pssa.202000720",
language = "English",
volume = "218",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-Blackwell",
number = "7",

}