Optimization of Near-Surface Quantum Well Processing

Research output: Contribution to journalArticle

Standard

Harvard

APA

CBE

MLA

Vancouver

Author

RIS

TY - JOUR

T1 - Optimization of Near-Surface Quantum Well Processing

AU - Olausson, Patrik

AU - Södergren, Lasse

AU - Borg, Mattias

AU - Lind, Erik

PY - 2021

Y1 - 2021

N2 - Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

AB - Herein, an optimized process flow of near-surface quantum well metal–oxide–semiconductor field-effect transistors (MOSFETs) based on planar layers of metalorganic vapor-phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre-growth cleaning and post-metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well-defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

KW - InGaAs

KW - metalorganic vapor-phase epitaxy

KW - metal–oxide–semiconductor field-effect transistors

KW - mobility

KW - quantum wells

U2 - 10.1002/pssa.202000720

DO - 10.1002/pssa.202000720

M3 - Article

AN - SCOPUS:85100035897

VL - 218

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 7

M1 - 2000720

ER -