Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

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The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.


  • M. Tuominen
  • J. Lang
  • J. Dahl
  • M. Kuzmin
  • M. Yasir
  • J. Makela
  • Jacek Osiecki
  • Karina Schulte
  • M. P. J. Punkkinen
  • P. Laukkanen
  • K. Kokko
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Social Sciences Interdisciplinary
  • Other Engineering and Technologies not elsewhere specified
Original languageEnglish
Article number011606
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2015
Publication categoryResearch